| PART |
Description |
Maker |
| MH32D64KQH-75 MH32D64KQH-10 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32D64AKQJ-75 MH32D64AKQJ-10 |
2,147,483,684-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72BBFA-8 MH32S72BBFA-7 B99046 |
From old datasheet system
2 /415 /919 /104-BIT ( 33 /554 /432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MH32S72DBFA-8 MH32S72DBFA-7 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32S72DBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72APHB-8 MH32S72APHB-6 MH32S72APHB-7 B00007 |
From old datasheet system
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72AVJA-6 B00010 |
From old datasheet system
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GT320VP-80 M5M29GB320VP-80 M5M29VT320VP M5M29 |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
RENESAS[Renesas Electronics Corporation]
|
| MH32D72AKLB-10 MH32D72AKLB-75 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
2 /415 /919 /104-BIT (33 /554 /432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| THMR1E4-6 THMR1E4-8 |
33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:600MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:600MHz 33554432词（64MBytes）由18位（32M的词× 18位）直接Rambus的内存（输入/输出频率00MHz的）400字节2兆字× 18位）直接Rambus公司动态内存模块（输入/输出频率00MHz的）
33,554,432-Word4MBytes) by 18-Bit(32M-Word × 18Bit)Direct Rambus DRAM Module(I/O Frequency:800MHz64M字节(32M字18直接Rambus 动态RAM模块(I/O 频率:800MHz 33554432词（64MBytes）由18位（32M的词× 18位）直接Rambus的内存（输入/输出频率00MHz的）400字节2兆字× 18位）直接Rambus公司动态内存模块（输入/输出频率00MHz的）
|
Toshiba, Corp.
|
